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?004 fairchild semiconductor corporation september 2004 RMPA2259 rev. d RMPA2259 inters tage match input stage output stage input matching network output stage bias co llector bi as input stage bi as bias control mmic pa module rf out (8) v cc1 , v cc2 (1, 10) v mode (4) rf in (2) v ref (5) gnd (3, 6, 7, 9, 11) v cc = 3.4v (nom) v ref = 2.85v (nom) 1920?1980 mhz 50 ? i/o output matching networ k RMPA2259 28dbm wcdma poweredge? power amplifier module general description the RMPA2259 power amplifier module (pam) is designed for wcdma applications. the 2 stage pam is internally matched to 50 ? to minimize the use of external components and features a low power mode to reduce standby current and dc power consumption during peak phone usage. high power-added efficiency and excellent linearity are achieved using our ingap heterojunction bipolar transistor (hbt) process. features single positive-supply operation with low power and shutdown modes 40% linear efficiency at +28dbm average output power compact lcc package ?4.0 x 4.0 x 1.5mm internally matched to 50 ? and dc blocked rf input/ output. high-power/low-power operating modes for extended battery life module block diagram device
?004 fairchild semiconductor corporation RMPA2259 rev. d RMPA2259 absolute ratings 1 note: 1: no permanent damage with only one parameter set at extreme limit. other parameters set to typical values. electrical characteristics 1 wcdma operation general characteristics dc characteristics notes: 1: all parameters met at t c = +25?, v cc = +3.4v, f = 1950mhz and load vswr 1.2:1. 2: all phase angles 3: guaranteed by design symbol parameter ratings units v cc1 , v cc2 supply voltage 5.0 v v ref reference voltage 2.6 to 3.5 v v mode po w er control voltage 3.5 v p in rf input power +10 dbm t stg storage temperature range -55 to +150 ? symbol parameter test conditions min typ max units f operating frequency 1920 1980 mhz ssg small-signal gain po = 0dbm 24 db gp power gain po = +28dbm, vmode = 0v 26.5 db po = +16dbm, vmode 2.0v 24 db po linear output power vmode = 0v 28 dbm vmode 2.0v 16 dbm p aed pae (digital) @ +28dbm vmode = 0v 40 % p ae (digital) @ +16dbm vmode 2.0v 9 % p aed (digital) @ +16dbm vmode 2.0v, vcc = 1.4v 20 % itot high power total current po = +28dbm, vmode = 0v 450 ma low power total current po = +16dbm, vmode = 2.0v 130 ma adjacent channel leakage ratio 3gpp 3.2 03-00 dpcch + 1 dpdch a clr1 ?.0mhz offset po = +28dbm, vmode = 0v -40 dbc po = +16dbm, vmode 2.0v -43 dbc a clr2 ?0.0mhz offset po = +28dbm, vmode = 0v -53 dbc po = +16dbm, vmode 2.0v -66 dbc vswr input impedance 2.0:1 nf noise figure 3 db rx no receive band noise power po +28dbm, 1920 to 1980 mhz -139 dbm/hz 2fo-5fo harmonic suppression po +28dbm -30 dbc s spurious outputs 2, 3 load vswr 5.0:1 -60 dbc ruggedness with load mismatch 3 no permanent damage 10:1 tc case operating temperature -30 85 ? iccq quiescent current vmode 2.0v 50 ma iref reference current po +28dbm 5 8 ma icc(off) shutdown leakage current no applied rf signal 1 5 ?
?004 fairchild semiconductor corporation RMPA2259 rev. d RMPA2259 recommended operating conditions note: 1: rf input power for wcdma p out = +28dbm. symbol parameter min typ max units f operating frequency 1920 1980 mhz v cc1 , v cc2 supply voltage 3.0 3.4 4.2 v v ref reference voltage operating shutdown 2.7 0 2.85 3.1 0.5 v v v mode bias control voltage low-power high-power 1.8 0 2.0 3.0 0.5 v v p out linear output power high-power low-power +28 +16 dbm dbm t c case operating temperature -30 +85 ?
?004 fairchild semiconductor corporation RMPA2259 rev. d RMPA2259 figure 1. RMPA2259 w-cdma 4x4mm 2 pam vcc = 3.4v, vref = 2.85v, pout = 28dbm RMPA2259 w-cdma 4x4mm 2 pam vcc = 3.4v, vref = 2.85v, pout = 28dbm gain (db) frequency (mhz) 23 24 25 26 27 28 29 30 31 32 33 2000 1980 1960 1940 1920 1900 figure 2. pae (%) frequency (mhz) 35 36 37 38 39 40 41 42 43 44 45 2000 1980 1960 1940 1920 1900 figure 3. RMPA2259 w-cdma 4x4mm 2 pam vcc = 3.4v, vref = 2.85v, pout = 28dbm RMPA2259 w-cdma 4x4mm 2 pam vcc = 3.4v, vref = 2.85v, pout = 28dbm aclr1 (dbc) frequency (mhz) -50 -48 -46 -44 -42 -40 -38 -36 -34 -32 -30 2000 1980 1960 1940 1920 1900 figure 4. aclr2 (dbc) frequency (mhz) -60 -58 -56 -54 -52 -50 -48 -46 -44 -42 -40 2000 1980 1960 1940 1920 1900 typical characteristics high-power mode (vmode = 0v)
?004 fairchild semiconductor corporation RMPA2259 rev. d RMPA2259 figure 5. RMPA2259 w-cdma 4x4mm 2 pam vref = 2.85v, pout = 16dbm RMPA2259 w-cdma 4x4mm 2 pam vref = 2.85v, pout = 16dbm aclr1 (dbc) frequency (mhz) v cc = 3.4v v cc = 3.4v v cc = 3.0v v cc = 3.0v v cc = 2.0v v cc = 2.0v v cc = 1.5v v cc = 1.5v v cc = 1.2v v cc = 1.2v 20 21 22 23 26 25 26 27 28 29 30 2000 1980 1960 1940 1920 frequency (mhz) 2000 1980 1960 1940 1920 1900 1900 frequency (mhz) 2000 1980 1960 1940 1920 1900 figure 6. frequency (mhz) 5 10 15 20 25 30 2000 1980 1960 1940 1920 1900 -55 -53 -51 -49 -47 -45 -43 -41 -39 -37 -35 figure 7. RMPA2259 w-cdma 4x4mm 2 pam vref = 2.85v, pout = 16dbm RMPA2259 w-cdma 4x4mm 2 pam vref = 2.85v, pout = 16dbm gain (db) figure 8. pae (%) v cc = 3.4v v cc = 3.0v v cc = 3.0v v cc = 2.0v v cc = 3.4v v cc = 2.0v v cc = 1.5v v cc = 1.5v v cc = 1.2v v cc = 1.2v aclr2 (dbc) -70 -68 -66 -64 -62 -60 -58 -56 -54 -52 -50 efficiency improvement application in addition to high-power/low-power bias modes, the efficiency of the pa module can be significantly increased at backed-off rf power levels by dynamically varying the supply voltage (vcc) applied to the amplifier. since mobile handsets and power amplifiers frequently operate at 10 20db back-off, or more, from maximum rated linear power, battery life is highly dependent on the dc power consumed at antenna power levels in the range of 0 to +16dbm. the reduced demand on transmitted rf power allows the pa supply voltage to be reduced for improved efficiency, while still meeting linearity requirements for cdma modulation with excellent margin. high-efficiency dc-dc converters are now available to implement switched-voltage operation. the following charts show measured performance of the pa module in low-power mode (vmode = +2.0v) at +16dbm output power and over a range of supply voltages from 3.4v nominal to 1.2v. power-added efficiency is more than doubled from 9.5 percent to nearly 25 percent (vcc = 1.2v) while maintaining a typical aclr1 of -46dbc and aclr2 of approximately -60dbc. operation at even lower levels of vcc supply voltage are possible with a further restriction on the maximum rf output power. as shown below, the pa module can be biased at a supply voltage of as low as 0.7v with an efficiency as high as 10?2 percent at +8dbm output power. excellent signal linearity is still maintained even under this low supply voltage condition. typical characteristics (continued) low-power mode (po = +16dbm)
?004 fairchild semiconductor corporation RMPA2259 rev. d RMPA2259 figure 9. RMPA2259 w-cdma 4x4mm 2 pam vref = 2.85v, pout = 16dbm, freq = 1.95ghz RMPA2259 w-cdma 4x4mm 2 pam vref = 2.85v, pout = 16dbm, freq = 1.95ghz gain (db) v cc (v) 16 18 20 22 24 26 28 30 4 2 2.5 3 3.5 1.5 1 0.5 figure 10. figure 11. RMPA2259 w-cdma 4x4mm 2 pam vref = 2.85v, pout = 16dbm, freq = 1.95ghz RMPA2259 w-cdma 4x4mm 2 pam vref = 2.85v, pout = 16dbm, freq = 1.95ghz figure 12. pae (%) v cc (v) 8 12 16 20 24 28 32 4 2 2.5 3 3.5 1.5 1 0.5 aclr2 (dbc) v cc (v) -68 -66 -64 -62 -60 -58 -56 -54 -52 -50 -48 4 2 2.5 3 3.5 1.5 1 0.5 aclr1 (dbc) v cc (v) -50 -48 -42 -44 -46 -40 -38 -36 -34 -32 -30 -28 -26 4 2 2.5 3 3.5 1.5 1 0.5 typical characteristics (continued)
?004 fairchild semiconductor corporation RMPA2259 rev. d RMPA2259 figure 13. RMPA2259 w-cdma 4x4mm 2 pam vref = 2.85v, pout = 12dbm, freq = 1.95ghz RMPA2259 w-cdma 4x4mm 2 pam vref = 2.85v, pout = 12dbm, freq = 1.95ghz gain (db) v cc (v) 16 18 20 22 24 26 28 30 4 2 2.5 3 3.5 1.5 1 0.5 figure 14. figure 15. RMPA2259 w-cdma 4x4mm 2 pam vref = 2.85v, pout = 12dbm, freq = 1.95ghz RMPA2259 w-cdma 4x4mm 2 pam vref = 2.85v, pout = 12dbm, freq = 1.95ghz figure 16. pae (%) v cc (v) 4 8 12 16 20 24 4 2 2.5 3 3.5 1.5 1 0.5 aclr2 (dbc) v cc (v) -68 -66 -64 -62 -60 -58 -56 -54 -52 -50 -48 4 2 2.5 3 3.5 1.5 1 0.5 aclr1 (dbc) v cc (v) -50 -48 -42 -44 -46 -40 -38 -36 -34 -32 -30 -28 -26 4 2 2.5 3 3.5 1.5 1 0.5 typical characteristics (continued)
?004 fairchild semiconductor corporation RMPA2259 rev. d RMPA2259 figure 17. RMPA2259 w-cdma 4x4mm 2 pam vref = 2.85v, pout = 8dbm, freq = 1.95ghz RMPA2259 w-cdma 4x4mm 2 pam vref = 2.85v, pout = 8dbm, freq = 1.95ghz gain (db) v cc (v) 16 18 20 22 24 26 28 30 4 2 2.5 3 3.5 1.5 1 0.5 figure 18. figure 19. RMPA2259 w-cdma 4x4mm 2 pam vref = 2.85v, pout = 8dbm, freq = 1.95ghz RMPA2259 w-cdma 4x4mm 2 pam vref = 2.85v, pout = 8dbm, freq = 1.95ghz figure 20. 0 2 4 6 8 10 12 14 4 2 2.5 3 3.5 1.5 1 0.5 pae (%) v cc (v) aclr2 (dbc) v cc (v) -68 -70 -66 -64 -62 -60 -58 -56 -54 -52 -50 4 2 2.5 3 3.5 1.5 1 0.5 aclr1 (dbc) v cc (v) -53 -55 -51 -49 -47 -45 -43 -41 -39 -37 -35 4 2 2.5 3 3.5 1.5 1 0.5 typical characteristics (continued)
?004 fairchild semiconductor corporation RMPA2259 rev. d RMPA2259 applications information caution: this is an esd sensitive device. precautions to avoid permanent device damage: cleanliness: observe proper handling procedures to ensure clean devices and pcbs. devices should remain in their original packaging until component placement to ensure no contamination or damage to rf, dc and ground contact areas. device cleaning: standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. static sensitivity: follow esd precautions to protect against esd damage: ? properly grounded static-dissipative surface on which to place devices. static-dissipative floor or mat. ? properly grounded conductive wrist strap for each person to wear while handling devices. general handling: handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. avoiding damaging the rf, dc, and ground contacts on the package bottom. do not apply excessive pressure to the top of the lid. device storage: devices are supplied in heat-sealed, moisture-barrier bags. in this condition, devices are protected and require no special storage conditions. once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. device usage: fairchild recommends the following procedures prior to assembly. dry-bake devices at 125? for 24 hours minimum. note: the shipping trays cannot withstand 125? baking temperature. assemble the dry-baked devices within 7 days of removal from the oven. during the 7-day period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30? if the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure must be repeated. solder materials & temperature profile: reflow soldering is the preferred method of smt attachment. hand soldering is not recommended. reflow profile ramp-up: during this stage the solvents are evaporated from the solder paste. care should be taken to prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. a typical heating rate is 1- 2?/sec. pre-heat/soak: the soak temperature stage serves two purposes; the flux is activated and the board and devices achieve a uniform temperature. the recommended soak condition is: 120?50 seconds at 150?. reflow zone: if the temperature is too high, then devices may be damaged by mechanical stress due to thermal mismatch or there may be problems due to excessive solder oxidation. excessive time at temperature can enhance the formation of inter-metallic compounds at the lead/board interface and may lead to early mechanical failure of the joint. reflow must occur prior to the flux being completely driven off. the duration of peak reflow temperature should not exceed 10 seconds. maximum soldering temperatures should be in the range 215?20?, with a maximum limit of 225?. cooling zone: steep thermal gradients may give rise to excessive thermal shock. however, rapid cooling promotes a finer grain structure and a more crack- resistant solder joint. the illustration below indicates the recommended soldering profile. solder joint characteristics: proper operation of this device depends on a reliable void- free attachment of the heat sink to the pwb. the solder joint should be 95% void-free and be a consistent thickness. rework considerations: rework of a device attached to a board is limited to reflow of the solder with a heat gun. the device should not be subjected to more than 225? and reflow solder in the molten state for more than 5 seconds. no more than 2 rework operations should be performed.
?004 fairchild semiconductor corporation RMPA2259 rev. d RMPA2259 0 20 40 60 80 100 120 140 deg (c) time (sec) 10 sec 183c 1c/sec 1c/sec soak at 150c for 60 sec 45 sec (max) above 183c 160 180 200 220 240 060 120 180 240 300 2 10 8 3,6,7, 9 sma1 rf in vcc2 (package base) 50 ohm trl 50 ohm trl 3.3 f vre f RMPA2259 pyyw w 3.3 f 1000 pf 1000 pf 1000 pf 0.1 f 4 vm ode 11 5 sma2 rf out vcc1 1 u31xx recommended solder reflow profile evaluation board schematic
?004 fairchild semiconductor corporation RMPA2259 rev. d RMPA2259 3 6 5 6 5 7 5 4 1 2 evaluation board layout materials list dc turn on sequence: 1. vcc1 = vcc2 = 3.4v (typical) 2. vref = 2.85v (typical) 3. vmode = 2.0v (pout < 16dbm), 0v (pout > 16dbm) qty item no. part number description vendor 11 g657553-1 v2 pc board fairchild 22 #142-0701-841 sma connector johnson 33 #2340-5211tn terminals 3m ref 4 g65758 4- assembly, rmpa1959 fairchild 35 grm39xr102ks0v 1000pf capacitor (0603) murata 35 (alt) ecj-1v81h102k 1000pf capacitor (0603) panasonic 26 c3216x5r1a335m 3.3? capacitor (1206) tdk 17 grm39ysv104z16v 0.1? capacitor (0603) murate 17 (alt) ecj-1vb1cid4k 0.1? capacitor (0603) panasonic a/r 8 sn63 solder paste indium corp. a/r 9 sn96 solder paste indium corp
?004 fairchild semiconductor corporation RMPA2259 rev. d RMPA2259 bottom view top view front view 0.1378 (3.50) typ. 0.1436 (3.65) 0.0098 (0.25) typ. 0.0425 (1.08) 1 2 3 4 5 10 9 8 7 6 0.0724 (1.84) pin 1 indicator 0.0118 (0.30) typ. 0.0069 (0.18) 0.0335 (0.85) typ. 0.1575 (4.00 ) +.004 ?0.02 +.100 ?.00 0.0830 (1.60) dimensions are in inches (mm) 2x pa2259 pyyww u31xx package outline package pinout pin # signal name description 1 vcc1 supply voltage to input stage 2 rf in rf input signal 3 gnd ground 4 vmode high-power/low-power mode control 5 vref reference voltage 6 gnd ground 7 gnd ground 8 rf out rf output signal 9 gnd ground 10 vcc2 supply voltage to output stage 11 gnd paddle ground
disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? rev. i13 acex? activearray? bottomless? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? vcx? across the board. around the world.? the power franchise ? programmable active droop?

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